818-BB biased optical receiver

The 818-BB series biased photodetector is a cost-effective diagnostic tool suitable for various high-speed applications, such as viewing signals from Q-switched, mode-locked, or rapidly modulated lasers, as well as aligning picosecond lasers.

Silicon, UV silicon, GaAs, and InGaAs versions

The rise time can reach 35 ps

The amplifying detector can provide a gain of up to 26 dB

Fiber optic coupling options make alignment easier

contrast	model
	818-BB-21Biased photodetector, 300-1100 nm, silicon, 1.2 GHz
	818-BB-27Biased photodetector, 200-1100nm, silicon, 200 MHz
	818-BB-30Biased photodetector, 1000-1600nm, InGaAs, 2 GHz
	818-BB-31Biased photodetector, 1000-1600nm, InGaAs, 1.5 GHz, FC input jack
	818-BB-35Biased photodetector, 1000-1650nm, InGaAs, 12.5 GHz
	818-BB-36Biased photodetector, 1475-2100 nm, extended InGaAs, 12.5 GHz
	818-BB-36FBiased photodetector, 1475-2100 nm, extended InGaAs, 12.5 GHz, FC/UPC
	818-BB-40Biased photodetector, 300-1100nm, silicon, 25 MHz
	818-BB-45Biased photodetector, 400-900nm, GaAs, 12.5 GHz
	818-BB-45AFAmplification bias photodetector, AC coupling, 400-900nm, GaAs, 9 GHz, FC/UPC

Product specifications

Silicon Photodetectors

model	818-BB-21	818-BB-27	818-BB-40
Detector material	Silicon	UV Enhanced Silicon	Silicon
Bias voltage/bias voltage	9 V	24 V	24 V
Detector Type	PIN	PIN	PIN
Detector diameter	0.4 mm	2.55 mm	4.57 mm
acceptance angle	10°	50°	60°
wavelength range	300-1100 nm	200-1100 nm	350-1100 nm
3 dB bandwidth
rise time	<300 ps	3ns	<30 ns
Responsiveness	0.47 A/W @ 830 nm	0.56 A/W @ 830 nm	0.6 A/W @ 830 nm
output connector	BNC	BNC	BNC
NEP	<0.01 pW/√Hz	<0.1 pW/√Hz	<0.09 pW/√Hz
Saturation current	3 mA	2.5 mA	2 mA
Junction capacitance	<1.5 pF	<25 pF	<45 pF
Reverse Breakdown Voltage	20 V	150 V	50 V
Thread Type	8-32 and M4	8-32 and M4	8-32 and M4

GaAs and InGaAs Photodetectors

model	818-BB-30	818-BB-31	818-BB-35	818-BB-45	818-BB-51
Detector material	InGaAs	InGaAs	InGaAs	GaAs	Extended InGaAs
Bias voltage/bias voltage	6 V	6 V	6 V	3 V	3 V
Detector Type	PIN	PIN	PIN	PIN	PIN
Detector diameter	0.1 mm	0.1 mm	0.032 mm		0.040 mm
acceptance angle	20°	20°	30°	15°	20°
wavelength range	1000-1600 nm	1000-1600 nm	1000-1650 nm	500-890 nm	830-2150 nm
3 dB bandwidth	DC to 2 GHz	DC to 2 GHz	DC to 15 GHz	DC to 12.5 GHz	DC to 10 GHz
rise time	175 ps	175 ps	25 ps	30 ps	28 ps
Responsiveness	0.8 A/W @ 1300 nm	0.9 A/W @ 1300 nm	0.88 A/W @ 1550 nm	0.53 A/W @ 830 nm	1.3 A/W @ 2.0 µm
output connector	BNC	BNC	SMA	SMA	SMA
NEP	<0.1 pW/√Hz	0.1 pW/√Hz	<0.04 pW/√Hz	<0.02 pW/√Hz at 830 nm	<0.44 pW/√Hz @ 2000 nm
Saturation current	5 mA	10 mA	10 mA	10 mA
Junction capacitance	<0.75 pF	<1.25 pF	<0.12 pF	<0.3 pF
Reverse Breakdown Voltage	25 V	25 V	25 V	30 V
Thread Type	8-32 and M4	8-32 and M4	8-32 and M4	8-32 and M4	8-32 and M4

characteristic

Silicon version and purpleExternally enhanced siliconversion

818-BB-20、 -21 and -40 are composed of free space, small area, and large area silicon detectors, with a rise time range between 300 ps-1.5 ns. Except for the 818-BB-40, each device includes a built-in bias power supply consisting of a standard 3V lithium battery and a 50 ohm BNC connector output. The battery can be easily replaced, and disconnecting the detector from the oscilloscope input when not in use can extend the battery's lifespan. 818-BB-40 comes with an external power supply of 24 VDC. 818-BB-27Enhanced byComposed of a silicon detector with ultraviolet response, it is highly suitable for Nd: YAG, Nd: YLF, or other neodymium glass lasers with fourth harmonic and excimer lasers. In addition, its wide effective area and fast response time make it a universal bias detector in the frequency range of 200 to 1100 nm. In order to achieve fast response, this detector is equipped with a 24 VDC external power supply.

UV-Enhanced Silicon Free Space Detector

The 818-BB-27 consists of a silicon detector with an enhanced ultraviolet response, making it well suited for the fourth harmonic Nd:YAG, YLF or Glass Lasers and Excimer Lasers. Additionally, its large active area and fast response time make it an excellent general-purpose biased detector for the 200 to 1100 nm wavelength region. To attain its fast response, this detector comes with a 24 VDC external power supply.

InGaAs Free Space Detectors

The 818-BB-30, -31, and -35
consist of free-space, small and large area
InGaAs detectors, with rise times ranging from 300 ps to 1.5 ns for covering the 1000-1600 nm wavelength range. Each unit includes a built-in bias supply consisting of standard 3 V lithium cells and a 50 ohm BNC connector output. The 818-BB-51 features an extended InGaAs photodetector with a wavelength range of
1475–2100 nm.

GaAs and InGaAs versions

818-BB-30、 -31, -35, -45, and -51 are composed of free space, small area, and large area GaAs or InGaAs detectors, with a rise time range between 300 ps-1.5 ns. Each device includes a built-in bias power supply, consisting of a standard 3V lithium battery and a 50 ohm BNC connector output. The battery can be easily replaced, and disconnecting the detector from the oscilloscope input when not in use can extend the battery's lifespan.

Installation of optical connecting rod

The 8-32 threaded hole located at the bottom of the 818-BB bias light receiver can be used to install optical connectors.

Pay attention to ESD protection

These detectors are highly susceptible to damage caused by electrostatic discharge (ESD). When unpacking and operating these devices, please use ESD protection measures such as FK-STRAP.

The rise time can reach 25 ps

The 818-BB-35 and 818-BB-45 photodiode detector modules provide a low-cost solution for ultra fast measurements with a bandwidth of 12.5 GHz. These detectors are suitable for applications where Q-switching and ultrafast laser output analysis require a detector rise time of<25 ps (<30 ps for 818-BB-45). These detectors also use 3V lithium batteries (provided).